 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Ordering number : EISB0005 ISB-A27-0 Overview Ultrathin Miniature Package 4-channel N-channel MOSFET Array The ISB-A27-0 is a SANYO'S original SIP (System In Package) IC that includes four N-channel MOSFET devices. They are mounted into one thin-and-small package by utilizing SANYO's high-density mounting technology, "Integrated System in Board (ISB)". The advantage using its ultrathin miniature package makes the ISB-A27-0 ideal for switching devices in small, lowpower circuits for cell phones and other portable equipment. It achieves significant reduction in the component mounting area compared to discrete device implementations (approx 25% smaller than ECSP package). Features * Includes 4 identical N-channel MOSFET devices in a single package. * 1.6 mmx1.6 mmx0.75 mm ultrathin, miniature package. * 2.5V drive capability. Specifications Absolute Maximum Ratings at Ta = 25C Parameter Drain-to-source voltage Gate-to-source voltage Drain current Allowable power dissipation Operating ambient temperature Storage ambient temperature Symbol VDSS VGSS ID Pd max Topr Tstg When mounted on a specified board * Conditions Common to TR1, TR2, TR3, and TR4 Ratings 30 10 0.15 0.33 -30 to +85 -40 to +125 Unit V V A W C C * Specified board: 40mmx25mmx0.8mm FR4 board * ISB is a registered trademark of SANYO Electric Co., Ltd. Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before using any SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. 92706 / 42806HKIM No.0005-1/4 ISB-A27-0 Electrical Characteristics Overall Operating Characteristics at Ta = 25C, common to TR1, TR2, TR3, and TR4 Parameter Drain-to-source breakdown voltage Drain-to-source cutoff current Gate-to-source leakage current Gate-to-source cutoff current Drain-to-source on resistance Symbol VDSS IDSS IGSS VGS(off) RDS(on)1 RDS(on)2 RDS(on)3 Conditions min ID=1mA, VGS=0V VDS=30V, VGS=0V VGS=8V, VDS=0V VDS=10V, ID=100A ID=80mA, VGS=4V ID=40mA, VGS=2.5V ID=10mA, VGS=1.5V 3.4 4.2 6.7 30 10 10 1.3 11 14 20 Ratings typ max V A A V Unit Package Dimensions unit : mm 1.6 0.75 1.6 MIN 0.5 0.1 0.3 0.5 0.5 0.5 0.3 0.15 0.23 1 4 7 2 5 8 0.8 3 6 9 0.3 0.5 0.8 0.30 0.15 Equivalent Circuit Drain TR1 TR2 TR3 TR4 Source (Common) Gate Gate Protection Diode Body Diode No.0005-2/4 ISB-A27-0 160 ID - VDS V 3 .0 2.5 Ta=25C 12 RDS(on) - VGS Ta=25C V 140 120 100 80 60 40 20 0 0 0.1 0.2 V 2.0 Static Drain-to-Source On-State Resistance, RDS(on) - 10 Drain Current, ID - mA 4.0 V 8 VGS=1.5V 80mA 6 4 ID=40mA 2 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 2 4 6 8 10 ISB00021 Drain-to-Source Voltage, VDS - V 500 450 400 ISB00020 10 ID - VGS Gate-to-Source Voltage, VGS - V RDS(on) - ID -25 C 350 300 250 200 150 100 50 0 0 0.5 1.0 Static Drain-to-Source On-State Resistance, RDS(on) - Drain Current, ID - mA 25 C Ta = 7 75 C 5 Ta=75C 3 25C -25C 2 -2 5 C 25 C C 75 a= T 1.5 2.0 2.5 3.0 ISB00022 1.0 0.01 2 3 5 7 0.1 2 3 5 Gate-to-Source Voltage, VGS - V 10 RDS(on) - ID Drain Current, ID - A 100 7 1.0 ISB00023 RDS(on) - ID VGS=2.5V 7 VGS=1.5V Static Drain-to-Source On-State Resistance, RDS(on) - Static Drain-to-Source On-State Resistance, RDS(on) - 7 5 3 2 5 Ta=75C 25C 3 -25C 25C 10 7 5 Ta=75C -25C 2 3 2 1.0 0.001 1.0 0.01 2 3 5 7 0.1 2 3 5 Drain Current, ID - A 1000 7 5 3 2 100 7 5 3 2 10 7 5 3 2 1.0 0.2 0.4 0.6 0.8 1.0 1.0 ISB00024 7 2 3 5 7 0.01 2 3 5 IF - VSD Drain Current, ID - A 7 7 0.1 ISB00025 RDS(on) - Ta Ta=25C Static Drain-to-Source On-State Resistance, RDS(on) - 6 Forward Current, IF - mA 8 4 25 C -25 3 5V =2. GS V A, 4.0V 40m S= I D= A, VG 80m I D= Ta =7 5C C 2 1 0 -60 1.2 ISB00026 -40 -20 0 20 40 60 80 100 120 140 160 Diode Forward Voltage, VSD - V Ambient Temperature, Ta -C ISB00027 No.0005-3/4 ISB-A27-0 0.40 0.35 PD max - Ta Power Dissipation, PD max - W 0.30 0.25 0.20 0.15 0.10 0.05 0 -40 -20 0 20 40 60 80 100 Ambient Temperature,Ta -C ISB00028 Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of April, 2006. Specifications and information herein are subject to change without notice. PS No.0005-4/4 |
Price & Availability of ISB-A27-0
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |